maximum ratings: (t c =25c unless otherwise noted) symbol BUW34 buw35 buw36 units collector-emitter voltage v ces 500 800 900 v collector-emitter voltage v ceo 400 400 450 v emitter-base voltage v ebo 7.0 v collector current i c 10 a base current i b 5.0 a power dissipation p d 125 w operating and storage junction temperature t j , t stg -65 to +200 c thermal resistance jc 1.4 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ces v ce =rated v ces 500 a i ces v ce =rated v ces , t c =125 c 3 ma i ebo v eb =7.0v 1 ma bv ceo i c =100ma (BUW34, buw35) 400 v bv ceo i c =100ma (buw36) 450 v v ce(sat) i c =5.0a, i b =1.0a 1.5 v v ce(sat) i c =8.0a, i b =2.5a (buw35) 1.5 v v ce(sat) i c =8.0a, i b =2.5a (buw36) 3.0 v v be(sat) i c =5.0a, i b =1.0a 1.5 v v be(sat) i c =8.0a, i b =2.5a (buw35, buw36) 1.8 v h fe v ce =5.0v, i c =1.0a 15 t on i c =5.0a, i b1 =1.0a, v cc =250v 0.7 s t off i c =5.0a, i b1 =i b2 =1.0a, v cc =250v 3.8 s BUW34 buw35 buw36 npn silicon power transistor to-3 case central semiconductor corp. tm r0 (5-march 2008) description: the central semiconductor BUW34, buw35, and buw36 types are silicon npn power transistors designed for high voltage, fast switching applications. marking: full part number
central semiconductor corp. tm to-3 case - mechanical outline BUW34 buw35 buw36 npn silicon power transistor r0 (5-march 2008) marking: full part number lead code: 1) base 2) emitter c) collector
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